APT60GT60JRD |
RFQ for APT60GT60JRD Required Field |
 |
| Technical/Catalog Information | APT60GT60JRDQ3 |
| Vendor | Microsemi |
| Category | Transistors, FETs, IGBTs |
| Mounting Type | Screw Mount |
| Package Name | ISOTOP |
| IGBT Type | NPT (Non-Punch Through) |
| Collector Emitter Voltage (Vces) | 600.0 [Max] |
| Typical Vce(on) @ Vge, Ic | 2.5V @ 15V, 60A |
| Gate Emitter Voltage (Vge) | 30 [Max] |
| Collector Current (Ic) | 105.00 A [Max] |
| Collector Peak Current (Icm) | 360.000 A [Nom] |
| Power Dissipation | 379.000 W [Max] |
| Packaging | Tube |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | APT60GT60JRDQ3 APT60GT60JRDQ3 |
| Product | Manufacturers | Pack | D/C |
| APT60GT60JRD | - | 05+ | 19 |
The Thunderbolt IGBT™ is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ combined with an APT free-wheeling ultraFast Recovery Epitaxial Diode (FRED) offers superior ruggedness and ultrafast switching speed.
Features |
| • Low Forward Voltage Drop • High Freq. Switching to 150KHz• Low Tail Current • Ultra Low Leakage Current• Ultrafast Soft Recovery Antiparallel Diode• RBSOA and SCSOA Rated |
| Symbol | Parameter | APT60GF60JRD | UNIT |
| VCES | Collector-Emitter Voltage | 600 | Volts |
| VCGR | Collector-Gate Voltage (RGE = 20K) | 600 | |
| VGE | Gate-Emitter Voltage | ±20 | |
| IC1 | Continuous Collector Current @ TC = 25°C | 90 | Amps |
| IC2 | Continuous Collector Current @ TC = 90°C | 60 | |
| ICM1 | Pulsed Collector Current @ TC = 25°C | 180 | |
| ICM2 | Pulsed Collector Current @ TC = 90°C | 120 | |
| PD | Total Power Dissipation | 375 | Watts |
| TJ,TSTG | Operating and Storage Junction Temperature Range | -55 to 150 | °C |
| TL | Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. | 300 |
